IGBT - IXDH20N120D1HIGH VOLTAGE IGBT 1200V 38A vce 2.4V
Brand: GERMANY
Group: Semiconductor
Subgroup: IGBT
Model / Brand: IXYS
Stock: Please Call.
قیمت: 450,000 Tomman
Keywords: IXDH20N120D1
Detail:
Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 1200V Collector-emitter saturation voltage |Ucesat|, V: Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 30A Maximum junction temperature (Tj), °C: 150 Rise time, nS: 0 Maximum collector capacity (Cc), pF: Package: TO247